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| SK100GD126T Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 4 IGBT Module Inverse Diode Module SK100GD126T Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GD-T 1 14-09-2007 DIL (c) by SEMIKRON SK100GD126T Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 4 IGBT Module SK100GD126T Temperature sensor Target Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GD-T 2 14-09-2007 DIL (c) by SEMIKRON SK100GD126T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 14-09-2007 DIL (c) by SEMIKRON SK100GD126T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 14-09-2007 DIL (c) by SEMIKRON SK100GD126T UL recognized file no. E 63 532 5 14-09-2007 DIL (c) by SEMIKRON |
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